Plasma Model(模式)
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RIE/DP
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RIE : Reactive Ion Etching(蚀刻)
DP : Direct Plasma(直接作用)
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RF Generator(高频输出功率)
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10 to 500W
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Oscillating Frequency(振荡频率)
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13.56MHz
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Chamber Size工作室尺寸 (mm)
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344W×230D×45H
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用途:
*BGA、CSP和摄像基板的等离子处理。
*基板表面的改质。
*电子半导体产业相关部件、材料的
干洗、蚀刻及灰化。
*酸化膜、有机膜的除去。
*界面活性处理。
*表面污染物的去除。
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生产线编入和独立使用型In-Line and Stand Alone Type (Strip to Strip process)
Outline(概要)
Two lead frame (strip) vertical or parallel loading function.(双导引结构,垂直或水平装载功能。) Pull out two strip from Magazine--Loading two strip into the chamber--Plasuma cleaning process--Unloading two strip from chamber--Strip goes to magazine or next process to direct.
Total system controlled by PLC controller.(全系统PLC控制) LCD touch panel display and operation.(触摸式液晶显示屏操控) Lead frame (strip) size(导引带尺寸)--Up to 25 to 80(W)×100 to 250(L)×0.2 to 2.5(t)mm also. We can provide Customized In-Line plasma.(我们能够提供用户特制规格的生产线嵌入式等离子装置)
Feature(特点)
- Special electrode built in for getting good plasma efficient.(设计有能取得良好等离子效果的特殊电极)
- RIE/DP mode selectable(可选择使用RIE和DP模式)
- RF power up to 500W (高频功率提高到500W)
- All automatic operation(全自动操作运行)
- LCD touch panel and PLC control (触摸式LCD操控板)
- Any chamber size are available for customer's Lead frame or strip. (可以制作特殊规格的工作室尺寸)
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