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霍尔效应原理

霍尔效应原理
Principle of Hall Effect

把载有电流的半导体放在垂直于电流方向的磁场中时，半导体会产生横向磁场电现象，即：在垂直于磁场和电流的方向产生电动势，这就是霍尔效应。霍尔效应可以用经典的电磁理论解释。通常，霍尔电势UH表示成：
UH=RHIB0/d= RHIIB0
When placing the semiconductor carrying current in the magnetic field axial to the current direction, the semiconductor will generate transverse galvanomagnetic phenomenon, namely generate electromotive force in the direction axial to the magnetic field and current, which is Hall Effect. Hall Effect can be explained with classical galvanomagnetic theory. Generally, Hall voltage UH is expressed as:
UH=RHIB0/d= RHIIB0
其中： d——霍尔器件的厚度
Of which: d—the thickness of the Hall device
RH——霍尔常数
RH—Hall constant
RHI=RH/d——霍尔器件常数
RHI=RH/d—Constant of the Hall device
I——霍尔器件通过的电流强度
I—Current intensity passing through the Hall device
B0——被测的磁感应强度
B0—The measured magnetic induction intensity
从公式中可以看出，对于一定的霍尔器件，只要通过的电流I恒定不变，便可以通过霍尔器件的测量而间接测定磁场B0。由于用霍尔效应测量磁场时能够连续地和线性地读数、方法简单、使用寿命长，并能测量小空间和小间隙的磁场，因此霍尔效应法已经成为磁场测量中的一种重要方法。
It can be seen from the formula: For a certain Hall device, the magnetic field B0 can be indirectly measured through measuring the Hall device if only the passing current I is constant. Since it can count continuously and linearly with simple method and long service life when measuring the magnetic field with Hall Effect and can measure the magnetic field of small space and small gap, Hall Effect Method has become one important method among magnetic field measurements.

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