西门康IGBTSKIM601GD126DM两单元封装,芯片使用SPT技术,饱和压降约为2.0伏左右,开关损耗比NPT技术的IGBT模块降低20%左右,西门康IGBTSKIM601GD126DM完全可以在逆变焊机中使用,西门康IGBTSKIM601GD126DM可以使用在315安到500安的电焊机中,.5千瓦以上的变频器中等。
SKM400GAR128D SKM300GA128D SKM400GA128D SKM500GA128D SKM50GB12T4 SKM75GB12T4 SKM100GB12T4 SKM100GB12T4G SKM150GB12T4 SKM150GB12T4G SKM200GB12T4 SKM300GB12T4 SKM400GB12T4 SKM300GA12T4 SKM400GA12T4 SKM600GA12T4 SKM75GB173D SKM150GB173D SKM200GB173D SKM200GB173D1 SKM200GAL173D SKM200GAR173D SKM400GA173D SKM400GA173D1S
京公网安备 11010802026078号