法国Annealsys MOCVD设备 型号 MC050
实验室研发应用，MOCVD, RTP , RTCVD等多工艺性能,2英寸MOCVD设备。
应用：在硅基片，玻璃，太阳能电池多晶硅，化合物半导体基片上长金属和合金，过渡金属元素氮化物，碳纳米管，纳米线等膜层
法国Annealsys MOCVD设备 型号 MC050
实验室研发应用，MOCVD, RTP , RTCVD等多工艺性能,2英寸MOCVD设备。
应用：在硅基片，玻璃，太阳能电池多晶硅，化合物半导体基片上长金属和合金，过渡金属元素氮化物，碳纳米管，纳米线等膜层
设备应用：
用于镀制——
• Semiconductor: SiO2, HfO2, Ta2O5, Cu, TiN, TaN, …
•半导体： SiO2, HfO2, Ta2O5, Cu, TiN, TaN, …
• Nitride and alloys: GaN, AlN, GaAs, GaAsN…
•氮化物和合金： GaN, AlN, GaAs, GaAsN…
• High k Dielectric: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
•高K绝缘体: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
• Ferroelectric: SBT, SBTN, PLZT, PZT
•铁电物质: SBT, SBTN, PLZT, PZT
• Superconductor: YBCO, Bi-2223, Bi-2212, Tl-1223, …
•超导体: YBCO, Bi-2223, Bi-2212, Tl-1223, …
• Piezoelectric: (Pb, Sr)(Zr,Ti)O3, Modified Lead Titanate
•压电的: (Pb, Sr)(Zr,Ti)O3，改良钛酸铅
• Metals: Pt, Cu,…
•金属: Pt, Cu,…
• Carbon nanotubes, nanowires
•碳纳米管，纳米线
• Colossal Magneto Resistance
•大型磁致电阻
• Thermal coatings
•热涂层
• Buffer layers
•缓冲膜层
• Mechanical coatings
•机械涂层
• Optics
•光学
• Etc…
•等等
适应基片类型
• Mono crystalline wafers for Epitaxial Deposition
•外延沉积用单水晶基片
• Silicon wafers
•硅基片
• Compound semiconductor wafers
•化合物半导体基片
• Poly silicon wafers for solar cells
•用于太阳能电池的多晶硅基片
• Glass substrates
•玻璃基片
• Etc…
•等等
设备优越性能
• Compatibility with a wide range of precursors
•兼容宽范围源
=> High versatility for Research and Development applications
=>多用途适用于研究和开发应用
• State of the art liquid delivery and vaporization system
•液体传送和蒸发系统技术水平
=> Capability to vaporize a wide range of chemical precursors
=>适用于蒸发宽范围化学源
=> Capability to use thermally unstable precursors
=>适用于使用热不稳定源
• Process gas inlet separated from precursor inlet
•工艺气体进口与源进口隔离
=> No reaction outside of the substrate deposition area, no clogging
=>基片沉淀区域外无反应，无堵塞
• Easy dismantling, cleaning and installation of the reactor
•便于拆卸，清洗和安装反应器
=> Easy switching from one material to another
=>便于一种金属到另一种金属的转换
=> Easy service
=>便于维护
=> Low Cost of ownership
=>客户低消耗
• Full rising capability of the liquid panel
•液体面板满提升性能
=> No cross contamination, no need to dismantle liquid lines
=> 无交叉污染，无需拆除液体管路
设备主要特性
•Horizontal quartz tube with stainless steel flanges
•配有不锈钢法兰的水平石英管
• Lamp furnace for process up to 1200℃
•工艺灯炉，*高至1200℃
• Thermocouple control with PID temperature controller
•热电偶的控制器通过温度控制器的PID实现
• Up to 6 precursors or precursor mixtures
•*多6个源或源混合
• Downstream pressure control
•下流压力控制
• Purge gas line with needle valve
•配有针阀的吹扫气路
• Up to 6 process gas lines with digital MFC
•配有数字MFC，*多6条工艺气路
• PC control with Ethernet communication
•以太网PC控制
设备设计
• Compatible with a wide range of liquid vaporizers
•适用宽范围的液体蒸发器
• Up to 6 precursor liquid lines
•*多6条源液体管路
• Optimized organometallic chemical liquid line panel
•*优的有机金属化学液体管路面板
• Manual or automatic procedure for chemical cleaning of liquid lines
•手动或自动程序化学清洁液体管路
• Reacting compounds connections on chamber (H2O, O3…)
•腔室内反应复合物连接
• Gas panel for CVD applications
•CVD应用气体面板
PC完全设备控制软件
Access modes:
进入模式：
• Operator, Engineer, Administrator
•操作员，工程师，管理员
Recipe mode:
程序模式：
• Up to 400 operations per recipe
•每个程序*多400个操作
• Go to and macro functions
•前往和宏功能
• TC and pyrometer calibration associated to recipe
•TC和高温计校准和程序关联
• PID table associated to recipe
•PID表格和程序关联
Process:
工艺：
• Full data logging
•全部数据记录
• All data and table saved in process historical
•所有数据和表格储存在工艺历史记录中
Manual mode:
手动模式：
• Manual control of heating, vacuum and gas
•手动控制加热，抽真空和气体
Configuration mode:
配置模式：
• Mass flow ranges, calibration tables, alarm values…
•质量流量范围，校准表，报警值….
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